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| AP02N60H/J Pb Free Plating Product Advanced Power Electronics Corp. Low Gate Charge Repetitive Avalanche Rated Fast Switching Simple Drive Requirement RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 8 1.6A Description GD The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC converters. The through-hole version (AP02N60J) is available for low-profile applications. G DS S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 30 1.6 1 6 39 0.31 2 Units V V A A A W W/ mJ A mJ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 64 1.6 0.5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.2 110 Units /W /W 200705051-1/4 Data & specifications subject to change without notice AP02N60H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 600 2 - Typ. 0.6 0.2 14 2 8.5 9.5 12 21 9 155 27 14 Max. Units 8 4 10 100 100 20 240 V V/ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=1A VDS=VGS, ID=250uA VDS=10V, ID=1A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=30V ID=1.6A VDS=480V VGS=10V VDD=300V ID=1.6A RG=10,VGS=10V RD=150 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 3 Test Conditions IS=1.6A, VGS=0V IS=1.6A, VGS=0V, dI/dt=100A/s Min. - Typ. 360 1970 Max. Units 1.5 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25 C , VDD=50V , L=50mH , RG=25 , IAS=1.6A. 3.Pulse width <300us , duty cycle <2%. o 2/4 AP02N60H/J 1.5 0.9 T C =25 o C ID , Drain Current (A) 10V 6.0V 5.5V ID , Drain Current (A) 0.6 T C =150 C o 10V 6.0V 5.5V 1 5.0V 0.5 5.0V V G = 4.5 V 0.3 V G = 4.5 V 0 0 5 10 15 20 0 0 5 10 15 20 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 3 1.1 I D =1A V G =10V Normalized RDS(ON) 2 Normalized BVDSS (V) 1 1 0.9 0.8 0 -50 0 50 100 150 -50 0 50 100 150 T j , Junction Temperature ( C) o T j , Junction Temperature ( o C ) Fig 3. Normalized BVDSS v.s. Junction Temperature 100 5 Fig 4. Normalized On-Resistance v.s. Junction Temperature 4 10 T j = 150 o C o T j = 25 C VGS(th) (V) 1.2 IS (A) 3 1 2 0.1 0 0.2 0.4 0.6 0.8 1 1 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C ) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP02N60H/J 16 f=1.0MHz 1000 I D =1.6A VGS , Gate to Source Voltage (V) 12 8 C (pF) V DS =320V V DS =400V V DS =480V C iss 100 4 C oss C rss 0 10 0 4 8 12 16 20 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 1ms 1 10ms 0.2 ID (A) 0.1 100ms 0.1 0.1 0.05 PDM 0.02 1s DC T c =25 o C Single Pulse t T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 1 10 100 1000 10000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 |
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